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IXTA88N085T7 MOSFET Transistor

The IXTA88N085T7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA88N085T7 transistor as follows.

Circuit diagram symbol of the IXTA88N085T7 transistor

IXTA88N085T7 Transistor Specification

Transistor Code IXTA88N085T7
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 85V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 88A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.011Ohm
Power Dissipation (Maximum) PD 230W
Operating Junction Temperature (Maximum) 175°C
Rise Time 90nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 69nC

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