IXTA80N10T MOSFET Transistor

The IXTA80N10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA80N10T transistor as follows.

IXTA80N10T Transistor Specification

Transistor Code		IXTA80N10T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014Ohm
Power Dissipation (Maximum)	PD	230W
Operating Junction Temperature (Maximum)		175°C
Rise Time		100nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		60nC

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