IXTA76N25T MOSFET Transistor

The IXTA76N25T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA76N25T transistor as follows.

IXTA76N25T Transistor Specification

Transistor Code		IXTA76N25T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	76A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.039Ohm
Power Dissipation (Maximum)	PD	460W
Operating Junction Temperature (Maximum)		150°C
Rise Time		148nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		92nC

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