IXTA60N20T MOSFET Transistor

The IXTA60N20T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA60N20T transistor as follows.

IXTA60N20T Transistor Specification

Transistor Code		IXTA60N20T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	500W
Rise Time		118nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		73nC

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