IXTA60N10T MOSFET Transistor

The IXTA60N10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA60N10T transistor as follows.

IXTA60N10T Transistor Specification

Transistor Code		IXTA60N10T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	176W
Operating Junction Temperature (Maximum)		175°C
Rise Time		59nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		49nC

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