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IXTA4N150HV MOSFET Transistor

The IXTA4N150HV is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA4N150HV transistor as follows.

Circuit diagram symbol of the IXTA4N150HV transistor

IXTA4N150HV Transistor Specification

Transistor Code IXTA4N150HV
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Drain-Source Voltage (Maximum) VDS 1500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 6Ohm
Power Dissipation (Maximum) PD 280W
Drain-Source Capacitance 105pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 23nS
Gate-Threshold Voltage (Maximum) 5V

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