IXTA3N120TRL MOSFET Transistor

The IXTA3N120TRL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA3N120TRL transistor as follows.

IXTA3N120TRL Transistor Specification

Transistor Code		IXTA3N120TRL
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	1200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4.5Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		110pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		5V

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