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IXTA3N100P MOSFET Transistor

The IXTA3N100P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA3N100P transistor as follows.

Circuit diagram symbol of the IXTA3N100P transistor

IXTA3N100P Transistor Specification

Transistor Code IXTA3N100P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 1000V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3A
Drain-Source On-State Resistance (Maximum) RDS(on) 4.8Ohm
Power Dissipation (Maximum) PD 125W
Operating Junction Temperature (Maximum) 150°C
Rise Time 820nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 39nC

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