IXTA32N20T MOSFET Transistor

The IXTA32N20T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA32N20T transistor as follows.

IXTA32N20T Transistor Specification

Transistor Code		IXTA32N20T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	32A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.078Ohm
Power Dissipation (Maximum)	PD	200W
Operating Junction Temperature (Maximum)		175°C
Rise Time		110nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		38nC

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