IXTA2N80P MOSFET Transistor

The IXTA2N80P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA2N80P transistor as follows.

IXTA2N80P Transistor Specification

Transistor Code		IXTA2N80P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	6Ohm
Power Dissipation (Maximum)	PD	70W
Operating Junction Temperature (Maximum)		150°C
Rise Time		650nS
Gate-Threshold Voltage (Maximum)		5.5V

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