IXTA200N055T2 MOSFET Transistor

The IXTA200N055T2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA200N055T2 transistor as follows.

IXTA200N055T2 Transistor Specification

Transistor Code		IXTA200N055T2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	200A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0042Ohm
Power Dissipation (Maximum)	PD	360W
Operating Junction Temperature (Maximum)		175°C
Rise Time		49nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		109nC

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