IXTA1R4N120P MOSFET Transistor

The IXTA1R4N120P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA1R4N120P transistor as follows.

IXTA1R4N120P Transistor Specification

Transistor Code		IXTA1R4N120P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	1200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	13Ohm
Power Dissipation (Maximum)	PD	86W
Operating Junction Temperature (Maximum)		150°C
Rise Time		900nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		24.8nC

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