IXTA1N80P MOSFET Transistor

The IXTA1N80P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA1N80P transistor as follows.

IXTA1N80P Transistor Specification

Transistor Code		IXTA1N80P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	800V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	14Ohm
Power Dissipation (Maximum)	PD	42W
Rise Time		700nS

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