IXTA1N80 MOSFET Transistor

The IXTA1N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA1N80 transistor as follows.

IXTA1N80 Transistor Specification

Transistor Code		IXTA1N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	11Ohm
Power Dissipation (Maximum)	PD	40W
Operating Junction Temperature (Maximum)		150°C
Rise Time		710nS
Gate-Threshold Voltage (Maximum)		4.5V

UXPython is not the creator or an official representative of the IXTA1N80 MOSFET transistor. You can download the official IXTA1N80 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

IXTA08N50D2 MOSFET Transistor AOB7S60L MOSFET Transistor CS640_A0H MOSFET Transistor SFW9624 MOSFET Transistor 2SK4065-DL-1E MOSFET Transistor CEB6056 MOSFET Transistor NDB4060L MOSFET Transistor IRL3714ZSPBF MOSFET Transistor CEB21A2 MOSFET Transistor IXTA3N120 MOSFET Transistor IXFA130N10T2 MOSFET Transistor AP10N4R5S MOSFET Transistor 2SK3604-01S MOSFET Transistor IRFW630A MOSFET Transistor STB432S MOSFET Transistor CEB60N06G MOSFET Transistor 2SK3556-01SJ MOSFET Transistor IXTA5N50P MOSFET Transistor FDB6035L MOSFET Transistor AP40T03GS-HF MOSFET Transistor