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IXTA170N075T2 MOSFET Transistor

The IXTA170N075T2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA170N075T2 transistor as follows.

Circuit diagram symbol of the IXTA170N075T2 transistor

IXTA170N075T2 Transistor Specification

Transistor Code IXTA170N075T2
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 75V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 170A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0054Ohm
Power Dissipation (Maximum) PD 360W
Operating Junction Temperature (Maximum) 175°C
Rise Time 63nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 109nC

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