IXTA160N085T MOSFET Transistor

The IXTA160N085T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA160N085T transistor as follows.

IXTA160N085T Transistor Specification

Transistor Code		IXTA160N085T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	85V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	160A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	360W
Operating Junction Temperature (Maximum)		175°C
Rise Time		100nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		164nC

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