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IXTA120P065T MOSFET Transistor

The IXTA120P065T is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA120P065T transistor as follows.

Circuit diagram symbol of the IXTA120P065T transistor

IXTA120P065T Transistor Specification

Transistor Code IXTA120P065T
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 65V
Gate-Source Voltage (Maximum) VGS 15V
Drain Current (Maximum) ID 120A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.01Ohm
Power Dissipation (Maximum) PD 298W
Operating Junction Temperature (Maximum) 150°C
Rise Time 53nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 185nC

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