IXTA120P065T MOSFET Transistor

The IXTA120P065T is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA120P065T transistor as follows.

IXTA120P065T Transistor Specification

Transistor Code		IXTA120P065T
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	65V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	298W
Operating Junction Temperature (Maximum)		150°C
Rise Time		53nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		185nC

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