IXTA110N055T MOSFET Transistor

The IXTA110N055T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA110N055T transistor as follows.

IXTA110N055T Transistor Specification

Transistor Code		IXTA110N055T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	110A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.007Ohm
Power Dissipation (Maximum)	PD	230W
Operating Junction Temperature (Maximum)		175°C
Rise Time		70nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		67nC

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