IXKP10N60C5M MOSFET Transistor

The IXKP10N60C5M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXKP10N60C5M transistor as follows.

IXKP10N60C5M Transistor Specification

Transistor Code		IXKP10N60C5M
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.385Ohm
Power Dissipation (Maximum)	PD	31W
Operating Junction Temperature (Maximum)		150°C
Rise Time		260nS
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		17nC

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