IXKN75N60C MOSFET Transistor

The IXKN75N60C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXKN75N60C transistor as follows.

IXKN75N60C Transistor Specification

Transistor Code		IXKN75N60C
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227B
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.036Ohm
Power Dissipation (Maximum)	PD	560W
Operating Junction Temperature (Maximum)		150°C
Rise Time		580nS
Gate-Threshold Voltage (Maximum)		3.9V
Total Gate Charge		500nC

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