IXKN45N80C MOSFET Transistor

The IXKN45N80C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXKN45N80C transistor as follows.

IXKN45N80C Transistor Specification

Transistor Code		IXKN45N80C
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227B
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	44A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.074Ohm
Power Dissipation (Maximum)	PD	380W
Operating Junction Temperature (Maximum)		150°C
Rise Time		500nS
Gate-Threshold Voltage (Maximum)		3.9V
Total Gate Charge		360nC

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