IXKG25N80C MOSFET Transistor

The IXKG25N80C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXKG25N80C transistor as follows.

IXKG25N80C Transistor Specification

Transistor Code		IXKG25N80C
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-264
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.15Ohm
Power Dissipation (Maximum)	PD	250W
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		166nC

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