IXKC19N60C5 MOSFET Transistor

The IXKC19N60C5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXKC19N60C5 transistor as follows.

IXKC19N60C5 Transistor Specification

Transistor Code		IXKC19N60C5
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOPLUS220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	19A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.125Ohm
Power Dissipation (Maximum)	PD	132W
Operating Junction Temperature (Maximum)		150°C
Rise Time		430nS
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		53nC

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