IXFX55N50F MOSFET Transistor

The IXFX55N50F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFX55N50F transistor as follows.

IXFX55N50F Transistor Specification

Transistor Code		IXFX55N50F
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PLUS247
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	55A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.085Ohm
Power Dissipation (Maximum)	PD	560W
Operating Junction Temperature (Maximum)		150°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		5.5V
Total Gate Charge		195nC

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