IXFX360N10T MOSFET Transistor

The IXFX360N10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFX360N10T transistor as follows.

IXFX360N10T Transistor Specification

Transistor Code		IXFX360N10T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PLUS247
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	360A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0029Ohm
Power Dissipation (Maximum)	PD	1250W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		525nC

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