IXFX12N90Q MOSFET Transistor

The IXFX12N90Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFX12N90Q transistor as follows.

IXFX12N90Q Transistor Specification

Transistor Code		IXFX12N90Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.9Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		315pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		23nS
Gate-Threshold Voltage (Maximum)		5.5V
Total Gate Charge		90nC

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