IXFX120N65X2 MOSFET Transistor

The IXFX120N65X2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFX120N65X2 transistor as follows.

IXFX120N65X2 Transistor Specification

Transistor Code		IXFX120N65X2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PLUS247
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.024Ohm
Power Dissipation (Maximum)	PD	1250W
Drain-Source Capacitance		9000pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		23nS
Gate-Threshold Voltage (Maximum)		5.5V
Total Gate Charge		225nC

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