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IXFX120N30P3 MOSFET Transistor

The IXFX120N30P3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFX120N30P3 transistor as follows.

Circuit diagram symbol of the IXFX120N30P3 transistor

IXFX120N30P3 Transistor Specification

Transistor Code IXFX120N30P3
Transistor Type MOSFET
Control Channel Type N-Channel
Package PLUS247
Drain-Source Voltage (Maximum) VDS 300V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 120A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.027Ohm
Power Dissipation (Maximum) PD 1130W
Drain-Source Capacitance 1406pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 13nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 150nC

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