IXFX120N30P3 MOSFET Transistor

The IXFX120N30P3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFX120N30P3 transistor as follows.

IXFX120N30P3 Transistor Specification

Transistor Code		IXFX120N30P3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PLUS247
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.027Ohm
Power Dissipation (Maximum)	PD	1130W
Drain-Source Capacitance		1406pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		150nC

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