IXFV26N50P MOSFET Transistor

The IXFV26N50P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFV26N50P transistor as follows.

IXFV26N50P Transistor Specification

Transistor Code		IXFV26N50P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PLUS220
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	26A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.23Ohm
Power Dissipation (Maximum)	PD	400W
Operating Junction Temperature (Maximum)		150°C
Rise Time		200nS
Gate-Threshold Voltage (Maximum)		5.5V
Total Gate Charge		60nC

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