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IXFV12N90P MOSFET Transistor

The IXFV12N90P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFV12N90P transistor as follows.

Circuit diagram symbol of the IXFV12N90P transistor

IXFV12N90P Transistor Specification

Transistor Code IXFV12N90P
Transistor Type MOSFET
Control Channel Type N-Channel
Package PLUS200
Drain-Source Voltage (Maximum) VDS 900V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.9Ohm
Power Dissipation (Maximum) PD 380W
Operating Junction Temperature (Maximum) 150°C
Rise Time 300nS
Gate-Threshold Voltage (Maximum) 6.5V
Total Gate Charge 56nC

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