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IXFV12N120P MOSFET Transistor

The IXFV12N120P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFV12N120P transistor as follows.

Circuit diagram symbol of the IXFV12N120P transistor

IXFV12N120P Transistor Specification

Transistor Code IXFV12N120P
Transistor Type MOSFET
Control Channel Type N-Channel
Package PLUS220
Drain-Source Voltage (Maximum) VDS 1200V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.35Ohm
Power Dissipation (Maximum) PD 543W
Operating Junction Temperature (Maximum) 150°C
Rise Time 300nS
Gate-Threshold Voltage (Maximum) 6.5V
Total Gate Charge 103nC

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