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IXFT80N10Q MOSFET Transistor

The IXFT80N10Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFT80N10Q transistor as follows.

Circuit diagram symbol of the IXFT80N10Q transistor

IXFT80N10Q Transistor Specification

Transistor Code IXFT80N10Q
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO268
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.015Ohm
Power Dissipation (Maximum) PD 360W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 180nC

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