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IXFT80N10 MOSFET Transistor

The IXFT80N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFT80N10 transistor as follows.

Circuit diagram symbol of the IXFT80N10 transistor

IXFT80N10 Transistor Specification

Transistor Code IXFT80N10
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO268
Drain-Source Voltage (Maximum) VDS 100V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0125Ohm
Power Dissipation (Maximum) PD 298W
Rise Time 200nS
Total Gate Charge 180nC

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