IXFT6N100Q MOSFET Transistor

The IXFT6N100Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFT6N100Q transistor as follows.

IXFT6N100Q Transistor Specification

Transistor Code		IXFT6N100Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO268
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2Ohm
Power Dissipation (Maximum)	PD	180W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		48nC

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