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IXFT52N30Q MOSFET Transistor

The IXFT52N30Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFT52N30Q transistor as follows.

Circuit diagram symbol of the IXFT52N30Q transistor

IXFT52N30Q Transistor Specification

Transistor Code IXFT52N30Q
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO268
Drain-Source Voltage (Maximum) VDS 300V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 52A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.06Ohm
Power Dissipation (Maximum) PD 360W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 150nC

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