IXFT28N50Q MOSFET Transistor

The IXFT28N50Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFT28N50Q transistor as follows.

IXFT28N50Q Transistor Specification

Transistor Code		IXFT28N50Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-268
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	28A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.2Ohm
Power Dissipation (Maximum)	PD	375W
Drain-Source Capacitance		470pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		94nC

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