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IXFT26N50 MOSFET Transistor

The IXFT26N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFT26N50 transistor as follows.

Circuit diagram symbol of the IXFT26N50 transistor

IXFT26N50 Transistor Specification

Transistor Code IXFT26N50
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO268
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 26A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.2Ohm
Power Dissipation (Maximum) PD 298W
Operating Junction Temperature (Maximum) 150°C
Rise Time 250nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 135nC

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