free stats

IXFR80N10Q MOSFET Transistor

The IXFR80N10Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFR80N10Q transistor as follows.

Circuit diagram symbol of the IXFR80N10Q transistor

IXFR80N10Q Transistor Specification

Transistor Code IXFR80N10Q
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOPLUS-247
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 76A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.015Ohm
Power Dissipation (Maximum) PD 310W
Drain-Source Capacitance 1600pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 70nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 180nC

UXPython is not the creator or an official representative of the IXFR80N10Q MOSFET transistor. You can download the official IXFR80N10Q MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

IXFR27N80Q IXFR27N80Q MOSFET Transistor IXFR12N100F IXFR12N100F MOSFET Transistor IXFR10N100F IXFR10N100F MOSFET Transistor IXFR24N100Q3 IXFR24N100Q3 MOSFET Transistor IXFR44N50Q3 IXFR44N50Q3 MOSFET Transistor IXTR102N65X2 IXTR102N65X2 MOSFET Transistor