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IXFR4N100Q MOSFET Transistor

The IXFR4N100Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFR4N100Q transistor as follows.

Circuit diagram symbol of the IXFR4N100Q transistor

IXFR4N100Q Transistor Specification

Transistor Code IXFR4N100Q
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOPLUS247
Drain-Source Voltage (Maximum) VDS 1000V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 3Ohm
Power Dissipation (Maximum) PD 80W
Operating Junction Temperature (Maximum) 150°C
Rise Time 200nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 39nC

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