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IXFR27N80Q MOSFET Transistor

The IXFR27N80Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFR27N80Q transistor as follows.

Circuit diagram symbol of the IXFR27N80Q transistor

IXFR27N80Q Transistor Specification

Transistor Code IXFR27N80Q
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOPLUS-247
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 27A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.3Ohm
Power Dissipation (Maximum) PD 500W
Drain-Source Capacitance 750pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 28nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 170nC

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