IXFR24N100 MOSFET Transistor

The IXFR24N100 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFR24N100 transistor as follows.

IXFR24N100 Transistor Specification

Transistor Code		IXFR24N100
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.39Ohm
Power Dissipation (Maximum)	PD	416W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5.5V
Total Gate Charge		267nC

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