IXFR180N06 MOSFET Transistor

The IXFR180N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFR180N06 transistor as follows.

IXFR180N06 Transistor Specification

Transistor Code		IXFR180N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOPLUS247
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	180A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.005Ohm
Power Dissipation (Maximum)	PD	417W
Operating Junction Temperature (Maximum)		150°C
Rise Time		200nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		420nC

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