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IXFR140N30P MOSFET Transistor

The IXFR140N30P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFR140N30P transistor as follows.

Circuit diagram symbol of the IXFR140N30P transistor

IXFR140N30P Transistor Specification

Transistor Code IXFR140N30P
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOPLUS247
Drain-Source Voltage (Maximum) VDS 300V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 70A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.026Ohm
Power Dissipation (Maximum) PD 360W
Operating Junction Temperature (Maximum) 150°C
Rise Time 200nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 185nC

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