IXFQ34N50P3 MOSFET Transistor

The IXFQ34N50P3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFQ34N50P3 transistor as follows.

IXFQ34N50P3 Transistor Specification

Transistor Code		IXFQ34N50P3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	34A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.17Ohm
Power Dissipation (Maximum)	PD	695W
Drain-Source Capacitance		390pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		57nS
Gate-Threshold Voltage (Maximum)		5V

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