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IXFQ34N50P3 MOSFET Transistor

The IXFQ34N50P3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFQ34N50P3 transistor as follows.

Circuit diagram symbol of the IXFQ34N50P3 transistor

IXFQ34N50P3 Transistor Specification

Transistor Code IXFQ34N50P3
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-3P
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 34A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.17Ohm
Power Dissipation (Maximum) PD 695W
Drain-Source Capacitance 390pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 57nS
Gate-Threshold Voltage (Maximum) 5V

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