IXFQ30N60X MOSFET Transistor

The IXFQ30N60X is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFQ30N60X transistor as follows.

IXFQ30N60X Transistor Specification

Transistor Code		IXFQ30N60X
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.155Ohm
Power Dissipation (Maximum)	PD	500W
Drain-Source Capacitance		1610pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		43nS
Gate-Threshold Voltage (Maximum)		4.5V

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