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IXFP36N30P3 MOSFET Transistor

The IXFP36N30P3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFP36N30P3 transistor as follows.

Circuit diagram symbol of the IXFP36N30P3 transistor

IXFP36N30P3 Transistor Specification

Transistor Code IXFP36N30P3
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 300V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 36A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.11Ohm
Power Dissipation (Maximum) PD 347W
Drain-Source Capacitance 355pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 39nS
Gate-Threshold Voltage (Maximum) 4.5V

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