IXFP180N10T2 MOSFET Transistor

The IXFP180N10T2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFP180N10T2 transistor as follows.

IXFP180N10T2 Transistor Specification

Transistor Code		IXFP180N10T2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	180A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	480W
Operating Junction Temperature (Maximum)		175°C
Rise Time		66nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		185nC

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