IXFN82N60Q3 MOSFET Transistor

The IXFN82N60Q3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN82N60Q3 transistor as follows.

IXFN82N60Q3 Transistor Specification

Transistor Code		IXFN82N60Q3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	66A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.075Ohm
Power Dissipation (Maximum)	PD	960W
Operating Junction Temperature (Maximum)		150°C
Rise Time		300nS
Gate-Threshold Voltage (Maximum)		6.5V
Total Gate Charge		275nC

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