IXFN64N60P MOSFET Transistor

The IXFN64N60P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN64N60P transistor as follows.

IXFN64N60P Transistor Specification

Transistor Code		IXFN64N60P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227B
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.096Ohm
Power Dissipation (Maximum)	PD	700W
Operating Junction Temperature (Maximum)		150°C
Rise Time		200nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		200nC

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