IXFN62N80Q3 MOSFET Transistor

The IXFN62N80Q3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN62N80Q3 transistor as follows.

IXFN62N80Q3 Transistor Specification

Transistor Code		IXFN62N80Q3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	49A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.14Ohm
Power Dissipation (Maximum)	PD	960W
Operating Junction Temperature (Maximum)		150°C
Rise Time		300nS
Gate-Threshold Voltage (Maximum)		6.5V
Total Gate Charge		270nC

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